Infineon BFR93AE6327HTSA1 NPN RF Transistor: Datasheet, Applications, and SOT-23 Packaging Overview

The Infineon BFR93AE6327HTSA1 is a high-performance NPN bipolar junction transistor (BJT) specifically engineered for radio frequency (RF) applications. As a member of Infineon's renowned RF transistor portfolio, this device is optimized for low-noise amplification and high-gain performance in a compact package, making it a cornerstone component in modern high-frequency electronic designs.

Datasheet Overview and Key Specifications

The datasheet for the BFR93AE6327HTSA1 highlights its exceptional characteristics for small-signal amplification. Its primary electrical specifications define its core capabilities:

Transition Frequency (fT): A high transition frequency of 6 GHz enables excellent performance in very high-frequency circuits.

Noque Figure: It features a low noise figure, typically around 1.8 dB at 1 GHz, making it ideal for sensitive receiver front-ends where signal clarity is paramount.

Gain: The transistor provides high gain, with a typical |S21|² of 17 dB at 1.8 GHz, ensuring effective signal amplification.

Collector-Emitter Voltage (VCEO): Rated at 12 V, it offers sufficient headroom for various circuit configurations.

Current Handling: A continuous collector current (IC) of 50 mA allows it to handle the demands of many RF stages.

Primary Applications

The combination of high frequency, low noise, and high gain makes the BFR93AE6327HTSA1 exceptionally versatile. Its primary applications include:

Cellular Infrastructure: Used in low-noise amplifier (LNA) stages for base stations and repeaters.

Wireless Communication Systems: Found in VCOs (Voltage-Controlled Oscillators), driver amplifiers, and mixer stages within WiFi, IoT, and general-purpose radio modules.

Broadband Amplification: Suitable for cable television (CATV) equipment and other broadband systems requiring flat gain over a wide frequency range.

General-Purpose RF Amplification: Serves as a fundamental building block in countless RF circuits for test equipment, industrial controls, and consumer electronics.

SOT-23 Packaging Overview

The device is housed in a SOT-23 (Small Outline Transistor) surface-mount package. This package is a critical factor in its widespread adoption due to several advantages:

Extremely Compact Footprint: Its small size saves valuable printed circuit board (PCB) real estate, which is crucial for modern, miniaturized devices.

Excellent High-Frequency Performance: The package leads are designed to minimize parasitic inductance and capacitance, which is essential for maintaining stability and performance at GHz frequencies.

Compatibility with Automated Assembly: The SOT-23 package is perfectly suited for high-speed pick-and-place machines, streamlining the manufacturing process.

ICGOODFIND Summary

The Infineon BFR93AE6327HTSA1 stands out as a highly reliable and efficient NPN RF transistor. Its robust combination of a high transition frequency (6 GHz), low noise figure, and high gain in the industry-standard SOT-23 package makes it an optimal choice for designers working on a wide spectrum of high-frequency applications, from wireless infrastructure to consumer connectivity solutions.

Keywords: RF Transistor, Low-Noise Amplifier (LNA), SOT-23 Package, High-Frequency Performance, NPN BJT