Infineon IRLHS6242TRPBF: Advanced Ultra-Low On-Resistance Power MOSFET for High-Efficiency Applications

In the relentless pursuit of higher efficiency and power density in modern electronic systems, the choice of switching components is paramount. The Infineon IRLHS6242TRPBF stands out as a premier solution, engineered to meet the demanding requirements of today's power management applications. This advanced N-channel HEXFET Power MOSFET leverages state-of-the-art silicon technology to deliver exceptional performance in a compact, surface-mount D-Pak (TO-252) package.

The cornerstone of this MOSFET's superiority is its ultra-low on-resistance (R DS(on)) of just 1.6 mΩ (max. at V GS = 10 V). This critically low resistance is the key to minimizing conduction losses during operation. When a MOSFET is in its on-state, power is dissipated as heat according to the formula P = I² × R DS(on). By drastically reducing R DS(on), the IRLHS6242TRPBF ensures that more energy is delivered to the load and less is wasted as heat. This translates directly into higher overall system efficiency, cooler operation, and the potential for reduced heatsinking requirements, which saves both space and cost.

This MOSFET is optimized for high-current switching tasks, capable of handling a continuous drain current (I D) of 147 A at 25°C. This robust current handling capability makes it an ideal candidate for a wide array of high-power applications. Furthermore, its low gate charge (Q G) and optimized switching characteristics contribute to reduced switching losses, which is crucial for high-frequency operation. This combination of low conduction and switching losses is essential for achieving peak efficiency in systems like switch-mode power supplies (SMPS), motor drives, and DC-DC converters.

The device is also designed for user convenience and reliability. It is fully avalanche rated, meaning it can withstand a certain amount of energy during voltage spikes, thereby enhancing the ruggedness and durability of the end application. Its logic-level gate drive (capable of being fully enhanced with just 4.5 V) simplifies drive circuit design, making it easier to interface with modern microcontrollers and logic circuits.

ICGOODFIND: The Infineon IRLHS6242TRPBF is a top-tier power MOSFET that sets a high benchmark for performance. Its ultra-low R DS(on) is the defining feature that enables maximized efficiency and power density, making it an superior component for designers striving to create cooler, smaller, and more energy-efficient power systems in industrial, automotive, and computing applications.

Keywords: Ultra-Low On-Resistance, High-Efficiency, Power MOSFET, High-Current Switching, Logic-Level Gate