Infineon IPB180N04S4-01: High-Performance OptiMOS 5 Power MOSFET for Advanced Automotive and Industrial Applications

The relentless pursuit of higher efficiency, power density, and reliability in power electronics has led to significant advancements in semiconductor technology. At the forefront of this innovation is Infineon Technologies with its OptiMOS™ 5 power MOSFET family. The IPB180N04S4-01 stands as a prime example, engineered to meet the exceptionally demanding requirements of modern automotive and industrial systems.

This device is a N-channel power MOSFET built on an advanced super-junction technology, boasting a low 40V drain-source voltage (VDS) rating. Its most striking feature is its extremely low typical on-state resistance (RDS(on)) of just 0.18 mΩ. This ultra-low resistance is a game-changer, as it directly translates to minimal conduction losses. In practical terms, this means significantly higher efficiency, which is paramount for reducing energy consumption and heat generation in applications like electric power steering (EPS), brake systems, and high-current DC-DC converters.

Beyond raw efficiency, the IPB180N04S4-01 excels in switching performance. The OptiMOS™ 5 technology ensures low gate charge (Qg) and outstanding figure-of-merit (FOM), enabling fast switching frequencies. This allows designers to shrink the size of associated passive components like inductors and capacitors, leading to more compact and lighter end-products—a critical factor in electric vehicle (EV) design.

The component’s robustness is tailored for harsh environments. It offers an enhanced body diode with high softness, which minimizes voltage spikes and electromagnetic interference (EMI), simplifying system design and improving reliability. Its qualification for AEC-Q101 standards guarantees that it can withstand the thermal cycling, humidity, and mechanical stress endemic to automotive applications. Furthermore, its high peak current handling capability makes it exceptionally suited for start-stop systems and 48V mild-hybrid architectures.

For industrial use, this MOSFET is ideal for high-current motor drives, robust power supplies, and solenoid control. Its high efficiency ensures cooler operation, leading to longer system lifespans and reduced need for complex cooling mechanisms.

ICGOOODFIND: The Infineon IPB180N04S4-01 is a benchmark in power semiconductor performance, delivering unparalleled efficiency, power density, and ruggedness. It is an optimal solution for engineers pushing the boundaries in next-generation automotive electrification and high-performance industrial equipment, enabling designs that are both more powerful and more efficient.

Keywords: OptiMOS 5, Ultra-low RDS(on), AEC-Q101, Power Density, Automotive Grade.