Intel PC28F640J3D75A: A Comprehensive Technical Overview of the 64-Mbit Flash Memory Device
The Intel PC28F640J3D75A stands as a significant component within the landscape of non-volatile memory solutions. This 64-Mbit (8-MByte) flash memory device, fabricated on advanced CMOS technology, was engineered to deliver high-performance, reliability, and flexibility for a wide array of embedded systems, from networking and telecommunications equipment to industrial controls and automotive applications.
At its core, the device is organized as 8,388,608 words by 8 bits or 4,194,304 words by 16 bits, providing designers with crucial flexibility for different system bus widths. This symmetrical block architecture is a defining feature, dividing the memory array into multiple uniform 128-Kbyte blocks. Each block can be independently erased, programmed, and locked, enabling efficient memory management and allowing for simultaneous read and write operations (Read-While-Write) when code is executed from one block while another is being updated. This capability is paramount for applications requiring continuous operation without downtime.
Performance is driven by its fast access times. The ‘75’ in its part number denotes a 75ns maximum random access time, ensuring rapid data retrieval critical for system responsiveness. The device supports a standard microprocessor parallel interface, simplifying integration. For programming, it offers a highly efficient 1.8V VPP write power supply, which reduces overall system power consumption during update operations compared to older 12V programming standards.
A key aspect of its design is the incorporation of Intel's advanced Command Set Architecture. Instead of responding to simple addresses, the device is controlled by writing specific command sequences into its command register. This method provides a streamlined interface for executing complex functions like block erasure, byte/word programming, and reading array or identifier codes. Furthermore, the device includes robust data protection mechanisms, including hardware and software lockout features to prevent accidental corruption of critical code segments.
The Intel PC28F640J3D75A is designed for resilience. It supports extended industrial temperature ranges and offers high endurance, with each block capable of supporting a minimum of 100,000 program/erase cycles. This makes it suitable for demanding environments where data integrity over a long product lifecycle is non-negotiable.
ICGOOODFIND: The Intel PC28F640J3D75A is a quintessential example of a high-performance, parallel NOR flash memory device. Its balanced architecture, combining fast read access, flexible block management, and robust data protection, solidified its role as a reliable workhorse for storing boot code and executing application code directly (XIP) in countless embedded systems of its era.
Keywords: Non-volatile Memory, Read-While-Write, Block Erase Architecture, Command Set Interface, Embedded Systems.
